MT40A512M16TD-062E AUT:R Micron 8Gb DDR4 SDRAM

Native speed-bin conditions At the native -062E DDR4-3200 bin, 0.625 ns ≤ tCK(AVG) < 0.682 ns; CL 22 without read DBI, CL 26 with read DBI, and CWL 16 or 20. Without read DBI, tAA is 13.75–19.00 ns; read DBI adds 4nCK to both tAA limits. tRCD and tRP are at least 13.75 ns, tRAS is at least 32 ns and at most 9 × tREFI; tRC minimum is tRAS + tRP = 45.75 ns. These speed-bin settings require DLL enabled. A 2tCK WRITE preamble requires CWL at least one clock above the lowest setting for the tCK range; programmed CWL must not exceed CL. Do not combine rounded clock settings in a way that violates tRAS or tRP.

Supply operating conditions VDDQ must not exceed VDD and must track it; AC parameters are measured with both rails tied. VDD slew is 0.004–600 V/ms between 300 mV and 80% of minimum VDD (20 MHz measurement bandwidth), with 300 mV to minimum VDD ramp no longer than 200 ms. Stable DC levels (0–250 kHz) must remain within the operating ranges. After changing a stable rail set point following initialization, repeat DLL reset and calibrations. AC noise above 250 kHz is limited to ±60 mV on VDD/VDDQ and ±120 mV on VPP without crossing the operating limits. The separate stress/sequencing notes also require VDD and VDDQ within 300 mV, VREF no greater than 0.6 × VDDQ (up to 300 mV when both supplies are below 500 mV), and VPP no lower than VDD/VDDQ while powered.

Temperature, refresh and self-refresh The exact Ultra-high (UT) part covers case TC −40 to +125 °C. Normal operation extends through 85 °C. 2× above 85 °C; 4× at/above 95 °C; 8× above 105 °C. Use the corresponding high-temperature self-refresh option above 85 °C. Below 0 °C, ODT resistance and I/O impedance must be derated. The 8192-cycle refresh windows are 64 ms through 85 °C, 32 ms above 85 to 95 °C, 16 ms above 95 to 105 °C, and 8 ms above 105 to 125 °C Die revision R does not support Extended Temperature Mode during temperature-controlled refresh (MR4[2]); the generic TCR description does not override this die-specific restriction. Use refresh/self-refresh settings applicable to the actual die and temperature. At exactly 95 °C, Table 78 additionally specifies the stricter tREFI ≤ 1.95 µs; retain that requirement rather than silently extending the feature-summary 32 ms interval to this boundary. The UT option is based on the manufacturer’s automotive usage model; consult Micron for that usage model.

Manufacturer declaration: Micron’s exact-part component declaration states compliance with RoHS Directive 2011/65/EU and amendment (EU) 2015/863. This component-level statement does not certify a supplied lot.

Manufacturer sources: Micron exact-part catalog · Micron 8Gb Automotive DDR4 Datasheet · Rev. L · Micron exact-part RoHS declaration