K4A8G165WC-BCTD Samsung 8Gb DDR4 SDRAM

Native speed-bin conditions At the native BCTD DDR4-2666 bin, 0.750 ns ≤ tCK(AVG) < 0.833 ns. CL is 19 without read DBI or 22 with read DBI; CWL is 14 or 18. Without read DBI, tAA is 14.25–18 ns; read DBI adds 3nCK to both tAA limits. tRCD and tRP are at least 14.25 ns, tRAS is at least 32 ns and at most 9 × tREFI, and tRC is at least 46.25 ns. The speed-bin table requires DLL enabled and gear-down mode disabled; optional non-native parenthetical values and reserved combinations are excluded.

Supply operating conditions VDDQ must not exceed VDD and must track VDD; AC parameters are measured with the supplies tied together. DC measurements use a 20 MHz bandwidth. Separate stress/sequencing notes require VDD and VDDQ within 300 mV at all times, VREFCA no greater than 0.6 × VDDQ (up to 300 mV when both rails are below 500 mV), and VPP no lower than VDD/VDDQ while powered. The operating ranges above must be observed; absolute maximum ratings are not operating ratings.

Temperature, refresh and self-refresh Normal case operation is 0–85 °C. Above 85 °C through 95 °C, issue REFRESH commands twice as often (tREFI ≤ 3.9 µs). For self-refresh in that extended range, use the specified manual extended setting MR2 A6=0 and A7=1. The datasheet notes IDD6 may increase by 10–20% in the extended range.

Manufacturer declaration: Samsung’s applicable datasheet identifies this 96-ball FBGA as lead-free, halogen-free and RoHS compliant. This manufacturer component statement does not certify a supplied lot.

Manufacturer sources: Samsung DDR4 product guide · May 2018 · Samsung 8Gb C-die DDR4 x16 Datasheet · Rev. 1.5