MT40A512M16LY-062E IT:E Micron 8Gb DDR4 SDRAM

Native timing. At DDR4-3200: 0.625 ≤ tCK < 0.682 ns; CL22, CWL16 or 20. tAA13.75–19 ns; tRCD and tRP ≥13.75 ns; tRAS ≥32 ns and ≤9 × tREFI; tRC ≥45.75 ns. For IT operation below 0 °C, apply the specified I/O impedance and ODT derating. Native operation uses DLL enabled; meet time minima and clock counts, including CWL ≤ CL and the 2tCK write-preamble constraint. Read DBI uses CL26 and adds 4nCK to tAA.

Supply conditions. VDDQ must be ≤VDD and track VDD; AC characterization ties the two rails. The DC bandwidth is20 MHz. Keep VDD/VDDQ within300 mV, VREFCA ≤0.6 × VDDQ (≤300 mV when both rails are below500 mV), and VPP ≥VDD/VDDQ. Absolute-maximum ratings are stress limits.

Power and rail limits. For VDD, follow the0.004–600 V/ms ramp limit and ≤200 ms power ramp from300 mV to minimum VDD. Maintain valid DC levels; changes after initialization require DLL reset and calibration. AC noise limits of ±60 mV for VDD/VDDQ and ±120 mV for VPP must remain within the operating ranges.

Temperature and refresh. In 1x refresh-command mode, the base interval is 7.8 µs. Table52 overlaps its temperature bands at 85 °C and 95 °C; apply the shorter overlapping interval: 3.9 µs at85 °C and 1.95 µs at95 °C. Above85 °C use at least double refresh; enable the applicable high-temperature self-refresh/TCR settings. Thermal scaling is separate from 2x/4x fine-granularity refresh. Do not apply the Die-R extended-TCR exclusion to Die E.

Manufacturer declaration: Micron’s exact-part certificate lists MT40A512M16LY-062E IT:E as compliant with EU RoHS2011/65/EU and2015/863/EU under the certificate’s stated conditions. It does not certify a supplied lot or a finished system.

Manufacturer sources: Micron 8Gb DDR4 Datasheet · Rev. U · Micron exact-part catalog · Micron exact-part RoHS certificate