K4A4G165WE-BIRC Samsung 4Gb DDR4 SDRAM
Samsung K4A4G165WE-BIRC is a 4Gb x16 DDR4 SDRAM component. The covered synchronous DDR4 component uses an 8n-prefetch architecture and double-data-rate transfers. System use requires the controller, electrical and package configuration to match this complete ordering code.
Availability, quantity and lead time are confirmed in your quotation.
K4A4G165WE-BIRC Specifications
Basic specifications
- Manufacturer
- Samsung
- Complete part number
- K4A4G165WE-BIRC
- Memory type
- DDR4 SDRAM
- Component density
- 4Gb
- Organization
- 256M x16
- Data bus width
- x16
Speed & electrical
- Data rate
- 2400 MT/s
- Clock
- 1200 MHz
- CL / tRCD / tRP
- 17-17-17Native speed; full limits and modes in Technical notes.
- VDD / VDDQ
- 1.2 V
- VDD / VDDQ operating range
- 1.14–1.26 V
- VPP
- 2.5 VOperating range:2.375–2.750 V.
Package & temperature
- Package
- 96-ball FBGA
- Body size
- 7.50 ±0.10 × 13.30 ±0.10 mmW × L; manufacturer tolerances.
- Overall height
- 1.10 ±0.10 mm
- Ball pitch
- 0.80 mmDimensioned on both axes.
- Temperature option
- Industrial (I)
- Normal case range
- −40 to +85 °CMeasured at top center of the case.
- Extended case range
- >85 to +95 °CAdditional refresh/self-refresh conditions apply.
Technical notes & sources
Native timing. At DDR4-2400: 0.833 ≤ tCK < 0.937 ns; CL17, CWL12 or16. tAA14.16–18 ns; tRCD and tRP ≥14.16 ns; tRAS ≥32 ns and ≤9 × tREFI; tRC ≥46.16 ns. DLL enabled and gear-down disabled. Native read DBI uses CL20, with tAA limits increased by3nCK. Optional lower-latency bins are not assumed; choose only supported CL/CWL/tCK combinations.
Supply conditions. VDDQ must be ≤VDD and track VDD; AC characterization ties the two rails. The DC bandwidth is20 MHz. Keep VDD/VDDQ within300 mV, VREFCA ≤0.6 × VDDQ (≤300 mV when both rails are below500 mV), and VPP ≥VDD/VDDQ. Absolute-maximum ratings are stress limits.
Temperature and refresh. Average tREFI is7.8 µs through85 °C and3.9 µs above85 through95 °C. Above85 °C, double the refresh-command frequency; if self-refresh is used, manual extended-temperature mode is mandatory: MR2 A6=0, A7=1. The extended band carries these additional conditions even for the industrial option.
Manufacturer declaration: Samsung’s March2025 RoHS declaration covers its Memory products placed on the EU market by Samsung and its subsidiaries, subject to its stated scope, concentration limits and exemptions. This is a component-level declaration, not a certificate for a supplied lot.
Manufacturer sources: Samsung 4Gb E-die DDR4 Datasheet · Rev. 1.4 · Samsung EU RoHS declaration · March 2025

K4A4G165WE-BIRC Datasheet
Specification review: 2026-11-02 · Related-part update: 2026-11-02.
96-ball FBGA · 7.50 ±0.10 × 13.30 ±0.10 mm Manufacturer drawing, not a product photo.
Selection notes
Does the industrial grade remove high-temperature setup?
The industrial option covers cold operation, but the controller still needs double-frequency refresh above 85°C case temperature, up to 95°C. Self-refresh in this band requires manual extended-temperature mode. Check both the cold operating limit and the high-temperature settings when qualifying the BOM.
Considering a higher-density x16 replacement?
For an upgrade from this 4Gb device to an 8Gb x16 part, confirm that the controller and firmware support the new density and address mapping. Then compare ball assignments and package dimensions against the board footprint before qualifying the candidate.
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