K4A8G085WB-BCTD Samsung 8Gb DDR4 SDRAM
Samsung K4A8G085WB-BCTD is an 8Gb x8 DDR4 SDRAM component. The covered synchronous DDR4 component uses an 8n-prefetch architecture and double-data-rate transfers. System use requires the controller, electrical and package configuration to match this complete ordering code.
Availability, quantity and lead time are confirmed in your quotation.
K4A8G085WB-BCTD Specifications
Basic specifications
- Manufacturer
- Samsung
- Complete part number
- K4A8G085WB-BCTD
- Memory type
- DDR4 SDRAM
- Component density
- 8Gb
- Organization
- 1G x8
- Data bus width
- x8
Speed & electrical
- Data rate
- 2666 MT/s
- Clock
- 1333 MHz
- CL / tRCD / tRP
- 19-19-19Native speed; full limits and modes in Technical notes.
- VDD / VDDQ
- 1.2 V
- VDD / VDDQ operating range
- 1.14–1.26 V
- VPP
- 2.5 VOperating range:2.375–2.750 V.
Package & temperature
- Package
- 78-ball FBGA
- Body size
- 7.50 ±0.10 × 11.00 ±0.10 mmW × L; manufacturer tolerances.
- Overall height
- 1.10 ±0.10 mm
- Ball pitch
- 0.80 mmDimensioned on both axes.
- Temperature option
- Commercial (C)
- Normal case range
- 0 to +85 °CMeasured at top center of the case.
- Extended case range
- >85 to +95 °CAdditional refresh/self-refresh conditions apply.
Technical notes & sources
Native timing. At DDR4-2666: 0.750 ≤ tCK < 0.833 ns; CL19, CWL14 or18. tAA14.25–18 ns; tRCD and tRP ≥14.25 ns; tRAS ≥32 ns and ≤9 × tREFI; tRC ≥46.25 ns. DLL enabled and gear-down disabled. Native read DBI uses CL22, with tAA limits increased by3nCK. Optional lower-latency bins are not assumed; choose only supported CL/CWL/tCK combinations.
Supply conditions. VDDQ must be ≤VDD and track VDD; AC characterization ties the two rails. The DC bandwidth is20 MHz. Keep VDD/VDDQ within300 mV, VREFCA ≤0.6 × VDDQ (≤300 mV when both rails are below500 mV), and VPP ≥VDD/VDDQ. Absolute-maximum ratings are stress limits.
Temperature and refresh. Average tREFI is7.8 µs through85 °C and3.9 µs above85 through95 °C. Above85 °C, double the refresh-command frequency; if self-refresh is used, manual extended-temperature mode is mandatory: MR2 A6=0, A7=1. The extended band carries these additional conditions even for the industrial option.
Manufacturer declaration: Samsung’s March2025 RoHS declaration covers its Memory products placed on the EU market by Samsung and its subsidiaries, subject to its stated scope, concentration limits and exemptions. This is a component-level declaration, not a certificate for a supplied lot.
Manufacturer sources: Samsung 8Gb B-die DDR4 Datasheet · Rev. 2.1 · Samsung EU RoHS declaration · March 2025
K4A8G085WB-BCTD Datasheet
Specification review: 2026-11-02 · Related-part update: 2026-11-02.
78-ball FBGA · 7.50 ±0.10 × 11.00 ±0.10 mm Manufacturer drawing, not a product photo.
Selection notes
Will the controller enable read DBI?
At DDR4-2666, enabling read DBI changes the applicable CAS latency from CL19 to CL22 and increases the tAA limits by 3 clock cycles. Check the controller’s DBI and latency configuration together before adopting its existing memory initialization settings.
Planning operation above 85°C?
Check that the controller doubles the refresh-command frequency when case temperature exceeds 85°C, up to the 95°C limit. If the design uses self-refresh in this band, enable the required manual extended-temperature mode. Include these settings in thermal qualification.
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