MT40A512M16TD-062E AAT:R Micron 8Gb DDR4 SDRAM
Micron MT40A512M16TD-062E AAT:R is an 8Gb x16 DDR4 SDRAM component. This component provides a synchronous external-memory interface. The controller configuration and board connections must match the complete ordering code.
Availability, quantity and lead time are confirmed in your quotation.
MT40A512M16TD-062E AAT:R Specifications
Basic specifications
- Manufacturer
- Micron
- Complete part number
- MT40A512M16TD-062E AAT:R
- Memory type
- DDR4 SDRAM
- Component density
- 8Gb
- Organization
- 512M x16
- Data bus width
- x16
Speed & electrical
- Data rate
- 3200 MT/s
- Clock
- 1600 MHzCK frequency; half the stated transfer rate.
- Native CL / tRCD / tRP
- 22-22-22Operating-mode conditions below.
- VDD / VDDQ
- 1.2 V
- VDD / VDDQ operating range
- 1.14–1.26 V
- VPP
- 2.5 VOperating range: 2.375–2.750 V.
Package & temperature
- Package
- 96-ball FBGA
- Temperature option
- Automotive (AAT)
- Body size
- 7.50 ±0.10 × 13.00 ±0.10 mmW × L; drawing tolerances.
- Package height
- 1.10 ±0.10 mm
- Ball pitch
- 0.80 mm TYP
- Normal case range
- −40 to +85 °CCase surface at top center of package.
- Extended case range
- >85 to +105 °CAdditional refresh and self-refresh conditions apply.
Technical notes & sources
Native timing. At DDR4-3200: 0.625 ≤ tCK < 0.682 ns; CL22 and CWL 16 or 20. tAA is 13.75–19 ns; tRCD and tRP are at least 13.75 ns; tRAS is at least 32 ns and at most 9 × tREFI. tRC must preserve tRAS + tRP after conversion to clock counts. DLL must be enabled. Read DBI uses CL26 and adds 4nCK to the tAA limits. CWL must not exceed CL; a 2tCK write preamble requires a CWL at least one clock above the lowest supported setting.
Supply conditions. VDDQ must not exceed VDD and must track it; AC characterization ties the rails. Keep VDD and VDDQ within 300 mV, VREFCA at or below 0.6 × VDDQ (at or below 300 mV while both rails are below 500 mV), and VPP at or above VDD/VDDQ when powered. Absolute-maximum ratings are stress limits.
Power ramp and noise. Between 300 mV and 80% of minimum VDD, use a VDD slew rate of 0.004–600 V/ms measured with 20 MHz bandwidth. Reach minimum VDD from 300 mV within 200 ms. DC levels and AC noise must remain within the operating ranges; above 250 kHz, permitted noise is ±60 mV on VDD/VDDQ and ±120 mV on VPP. A DC-level change after initialization requires DLL reset and calibration.
Temperature and refresh. The AAT option ends at 105 °C. Above 85 °C, shorten the refresh interval; above 95 °C, the 1x refresh-mode table specifies a fourfold refresh frequency. Exact boundary values in the temperature table overlap: use a conservatively shorter interval only as an engineering choice and confirm the boundary behavior before relying on a longer interval. Extended-temperature TCR is not supported on R-die. Select a supported self-refresh mode separately; below 0 °C apply the documented I/O-impedance and ODT derating.
Manufacturer declaration: Micron’s exact-part certificate lists MT40A512M16TD-062E AAT:R under EU RoHS 2011/65/EU and 2015/863/EU with the stated component-level substance limits. It does not certify an offered lot or a finished system.
Manufacturer sources: Micron 8Gb Automotive DDR4 Datasheet · Micron exact-part catalog · Micron exact-part RoHS certificate
MT40A512M16TD-062E AAT:R Datasheet
Specification review: 2026-11-09.
Manufacturer package drawing; not a photograph of an offered lot. Manufacturer drawing, not a product photo.
Selection notes
Can this R-die use extended-temperature TCR?
Do not enable extended-temperature TCR for the R revision. The AAT temperature option does not remove this die-specific restriction. Select the external refresh schedule and supported self-refresh mode for the actual case temperature, and check the mode-register setup before carrying over settings from an E-die design.
Does AAT cover the same high-temperature use as AUT?
Keep AAT in the purchase specification: this ordering option ends at 105 °C. A family document also describing UT does not extend this part to 125 °C. Review the hottest package condition and the refresh schedule, including temperature boundaries, before accepting a higher-temperature operating requirement.
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