MT40A2G16TBB-062E:F Micron 32Gb DDR4 SDRAM

Native timing. At DDR4-3200: 0.625 ≤ tCK < 0.682 ns; CL22, CWL 16 or 20. tAA 13.75–19 ns; tRCD and tRP ≥13.75 ns; tRAS ≥32 ns and ≤9 × tREFI; tRC ≥45.75 ns. DLL enabled. Read DBI uses CL26; add 4nCK to the tAA limits. CWL must not exceed CL; the 2tCK write preamble requires CWL at least one clock above the lowest valid setting. Preserve time minima when converting tRAS and tRP to tRC clock counts.

Supply conditions. VDDQ must be ≤VDD and track VDD; AC characterization ties the rails. Keep VDD/VDDQ within 300 mV, VREFCA ≤0.6 × VDDQ (≤300 mV when both rails are below 500 mV), and VPP ≥VDD/VDDQ when powered. Absolute-maximum ratings are stress limits.

Power and rail limits. Between 300 mV and 80% of minimum VDD, keep VDD slew at 0.004–600 V/ms using a 20 MHz band-limited measurement. Reach minimum VDD from 300 mV within 200 ms. Stable DC levels (0–250 kHz) and AC noise must remain inside the operating ranges. Above 250 kHz, permitted noise is ±60 mV for VDD/VDDQ and ±120 mV for VPP. A DC-level change after initialization requires DLL reset and calibration.

Temperature and refresh. In 1x refresh-command mode, tREFI is 7.8 µs through 85 °C. Above 85 °C through 95 °C, use 3.9 µs and enable the applicable self-refresh temperature or automatic self-refresh setting. Measure TC at the center of the package and keep it at or below 95 °C. The TwinDie thermal conditions govern this assembled device.

Manufacturer declaration: Micron’s exact-part certificate lists MT40A2G16TBB-062E:F as compliant with EU RoHS 2011/65/EU and 2015/863/EU under its stated conditions. This does not certify a supplied lot or a finished system.

Manufacturer sources: Micron 32Gb TwinDie DDR4 Datasheet · Micron 16Gb DDR4 Datasheet · Micron MT40A2G16TBB-062E:F exact-part catalog · Micron MT40A2G16TBB-062E:F RoHS certificate